carrier generation meaning in Chinese

载劣生成
载流子产生

Study on the computer - aided measurement of minority carrier generation lifetime and its application
少子产生寿命计算机辅助测量及应用的研究
Account for the high electrical field induced from the high applied voltage relative to small dimension device , the mechanism of hot - carrier generation is analysed , the si - h bond broken model for hot - carrier injection and interface states generation is deduced and the substrate current model is developed
基于mosfet偏压不能按比例缩小所导致的高电场，对mosfet的热载流子产生机理进行了分析，导出了热载流子注入所引起的界面态的si - h健断裂模型，并建立了表征器件热载流子效应的衬底电流模型。